Schwerpunktprogramm 2312: Energy Efficient Power Electronics (GaNius)
News vom 23.07.2020
The worldwide transition towards sustainable energy generation is accompanied by a further significant rise of the share of electric energy. Power electronics is a key technology enabling efficient distribution, conversion, and use of these large amounts of electric energy. The remarkable progress in wide-bandgap semiconductor materials allows for power semiconductor devices reaching switching speeds an order of magnitude above the state of the art, with significantly reduced ohmic and dynamic losses, and improved thermal properties. The semiconductor material Gallium Nitride (GaN) offers options for new depths of integration and novel converter topologies. GaN-based devices and circuits therefore enable the design of highly compact and efficient power-electronic systems far beyond the present state of the art.
The programme targets group III nitrides for power electronics. It is specifically designed to fund interdisciplinary and cooperative research on novel device geometries, converter designs, converter topologies, and components for efficient power electronic systems. Combining complementary expertise is required to achieve the goals of the programme.
Termin: 16.11.2020 (Registrierung bis 30.10.2020)
Adresse: DFG, Kennedyallee 40, 53175 Bonn
Kontakt: Dr.-Ing. Damian Dudek, Tel.: 0228/885-2573, firstname.lastname@example.org, Iris Leuthen-Schmittuz, Tel.: 0228 885-2809, email@example.com
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